dr. Giorgio BIASIOL

Technologist

AMD - Advanced Material and Devices group

IOM CNR, TASC Laboratory
S.S. 14, Km 163.5 in Area Science Park
34149 Basovizza (Trieste) - ITALY

e-mail  biasiol@IOMdomain

Tel  040 375 6439/6431/6453
Fax  040 226767
Location  MM-117

My Europass CV (pdf)

Personal Data

Italian citizen
Born in Gorizia, December 12, 1967

Academic Records

1998 PhD in Physics: "Formation mechanisms of low-dimensional semiconductor nanostructures grown by OMCVD on nonplanar substrates."
1992 Italian “Laurea” in Physics

Professional experience

  • 12/2001-present: Development Scientist, Laboratorio Nazionale TASC-INFM, Trieste (Italy).
  • 8/1999-11/2001: Post-doc Fellow, Laboratorio Nazionale TASC-INFM, Trieste (Italy).
  • 9/1998-8/1999: Research Associate, Institut de Micro- et Optoélectronique, École Polytechnique Fédérale, Lausanne (Switzerland).
  • 8/1994-9/1998: Graduate student-assistant, Institut de Micro- et Optoélectronique, École Polytechnique Fédérale, Lausanne (Switzerland).
  • 8/1992-7/1994: Research Specialist, Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN (USA).

Awards

Young Author Best Paper Award, 24th International Conference on the Physics of Semiconductors, Jerusalem (Israel), August 2-7, 1998

Main skills

  • Epitaxial growth of semiconductors by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition.
  • Magnetotransport measurements.
  • Scanning Electron and Atomic Force Microscopy.
  • Photoemission and Auger Spectroscopy.
  • X-Ray Diffraction
  • Semiconductor processing by optical photolithography and wet chemical etching

Languages

Italian, mother tongue, fluent English and French

Selected publications

  • D. Sammito, D. De Salvador, P. Zilio, G. Biasiol, T. Ongarello, M. Massari, G. Ruffato, M. Morpurgo, D. Silvestri, G. Maggioni, G. Bovo, M. Gaio and F. Romanato, “Integrated Architecture for the Electrical Detection of Plasmonic Resonances Based on High Electron Mobility Photo-Transistors”, Nanoscale 6, 1390 (2014).
  • N. Paradiso, S. Heun, S. Roddaro, L. Sorba, F. Beltram, G. Biasiol, L. N. Pfeiffer and K. W. West, "Imaging Fractional Incompressible Stripes in Integer Quantum Hall Systems", Phys. Rev. Lett. 108, 246801 (2012).
  • B. Karmakar, D. Venturelli, L. Chirolli, F. Taddei, V. Giovannetti, R. Fazio, S. Roddaro, G. Biasiol, L. Sorba, V. Pellegrini, and F. Beltram, "Controlled coupling of spin-resolved quantum Hall edge states", Phys. Rev. Lett. 107, 236804 (2011).
  • E.V. Deviatov, A. Lorke,G. Biasiol, and L. Sorba, "Energy transport by neutral collective excitations at the quantum Hall edge", Phys. Rev. Lett. 106, 256802 (2011).
  • M. Calic, P. Gallo, M. Felici, K. A. Atlasov, B. Dwir, A. Rudra, G. Biasiol, L. Sorba, G. Tarel, V. Savona and E. Kapon, "Phonon-Mediated Coupling of InGaAs/GaAs Quantum-Dot Excitons to Photonic Crystal Cavities", Phys. Rev. Lett. 106, 227402 (2011).
  • G. Biasiol and S. Heun, "Compositional Mapping of Semiconductor Quantum Dots and Rings", Physics Reports 500, 117 (2011).
  • J. M. Giesbers, U. Zeitler, M. I. Katsnelson, D. Reuter, A. D. Wieck, G. Biasiol, L. Sorba, and J.C. Maan, “Correlation-Induced Single Flux-Quanta Penetration in Quantum Rings”, Nature Physics 6, 173 (2010).
  • S. Roddaro, N. Paradiso, V. Pellegrini, G. Biasiol, L. Sorba, and F. Beltram, "Tuning non-linear charge transport between integer and fractional quantum Hall states ", Phys. Rev. Lett.103, 016802 (2009) (selected for a Viewpoint in Physics 2, 56 (2009)).
  • G. Günter, A. A. Anappara, J. Hees, L. Sorba, G. Biasiol, S. De Liberato, C. Ciuti, A. Tredicucci, A. Leitenstorfer, and R. Huber, “Sub-cycle switch-on of ultrastrong light-matter interaction”, Nature 458, 178 (2009).
  • V. S. Khrapai, A. A. Shashkin, M. G. Trokina, V. T. Dolgopolov, V. Pellegrini, F. Beltram,G. Biasiol and L. Sorba, “Filling factor dependence of the fractional quantum Hall effect gap”, Phys. Rev. Lett. 100, 196805 (2008).
  • V. S. Khrapai, A. A. Shashkin, M. G. Trokina, V. T. Dolgopolov, V. Pellegrini, F. Beltram, G. Biasiol, L. Sorba, “Direct measurements of the gap in the fractional quantum Hall effect”, Phys. Rev. Lett. 99, 086802 (2007).
  • G. Biasiol, S. Heun, G. B. Golinelli, A. Locatelli, T. O. Mentes, F. Z. Guo, C. Hofer, C. Teichert, and L. Sorba, “Surface compositional gradients of InAs/GaAs quantum dots”, Appl. Phys. Lett. 87, 223106 (2005).
  • S. Roddaro, V. Pellegrini, F. Beltram, G. Biasiol, and L. Sorba, “Inter­edge strong­to­weak scattering evolution at a constriction in the fractional quantum Hall regime”, Phys. Rev. Lett. 93, 046801 (2004).
  • D. Dini, R. Köhler, A. Tredicucci, G. Biasiol, L. Sorba, and F. Beltram, “Rabi splitting of intersubband cavity polaritons”, Phys. Rev. Lett. 90, 116401 (2003).
  • S. Roddaro, V. Pellegrini, F. Beltram, G. Biasiol, L. Sorba, R. Raimondi, and G. Vignale, “Nonlinear quasiparticle tunneling between fractional quantum Hall edges”, Phys. Rev. Lett. 90, 046805 (2003).
  • G. Biasiol, A. Gustafsson, K. Leifer, and E. Kapon, “Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures”, Phys. Rev. B 65, 205306 (2002).
  • G. Biasiol and E. Kapon, “Mechanisms of self-ordering of quantum nanostructures grown on nonplanar surfaces”, Phys. Rev. Lett. 81, 2962 (1998).
  • G. Biasiol, L. Sorba, G. Bratina, R. Nicolini, A. Fanciosi, M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, "Microscopic Capacitors and Neutral Interfaces in III-V/IV/III-V Semiconductor Heterostructures", Phys. Rev. Lett. 69 (8), 1283 (1992).

 

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